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Title: Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment

Abstract

The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above [approximately]10 kV/cm. At these biases, the switch also remained conductive for a much longer time ([approximately]100 ns) than the material recombination time ([approximately]1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance.

Authors:
 [1];  [2]
  1. Army Research Lab., Fort Monmouth, NJ (United States). Pulse Power Center
  2. Univ. of Rochester, NY (United States). Lab. for Laser Energetics
Publication Date:
OSTI Identifier:
5435788
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
Additional Journal Information:
Journal Volume: 40:12; Journal ID: ISSN 0018-9383
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR SWITCHES; ELECTRIC FIELDS; CARRIER DENSITY; LASER RADIATION; PHOTOCONDUCTIVITY; THEORETICAL DATA; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; EQUIPMENT; INFORMATION; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SWITCHES; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-)

Citation Formats

Kingsley, L E, and Donaldson, W R. Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment. United States: N. p., 1993. Web. doi:10.1109/16.249485.
Kingsley, L E, & Donaldson, W R. Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment. United States. https://doi.org/10.1109/16.249485
Kingsley, L E, and Donaldson, W R. 1993. "Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment". United States. https://doi.org/10.1109/16.249485.
@article{osti_5435788,
title = {Numerical analysis of electric field profiles in high-voltage GaAs photoconductive switches and comparison to experiment},
author = {Kingsley, L E and Donaldson, W R},
abstractNote = {The electric field in GaAs photoconductive switches has been observed with an ultrafast electro-optic imaging system to develop complex spatial and temporal structure immediately after illumination. High-field domains form at the switch cathode as the photogenerated carriers recombine for bias fields above [approximately]10 kV/cm. At these biases, the switch also remained conductive for a much longer time ([approximately]100 ns) than the material recombination time ([approximately]1 ns). A model which includes field-dependent mobility was developed to explain this data. Simulation of the electric field profile across the switch indicates that high-field domains which form at the switch cathode are the result of negative differential resistance.},
doi = {10.1109/16.249485},
url = {https://www.osti.gov/biblio/5435788}, journal = {IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)},
issn = {0018-9383},
number = ,
volume = 40:12,
place = {United States},
year = {Wed Dec 01 00:00:00 EST 1993},
month = {Wed Dec 01 00:00:00 EST 1993}
}