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Title: Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon

Abstract

Theoretical results are reported for the dynamical resistivity and free-carrier absorption from Fibonacci sequences of {delta}-doped layers in silicon. Distinct peaks develop, with increasing generation number, in the region of plasmon excitations and the spectra show self-similarity properties. Numerical results are presented for sequences with generation numbers 5, 10, and 15, corresponding to a total number of layers approximately equal to 10, 100, and 1000, respectively.

Authors:
 [1]
  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (US) Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 Department of Physics and Measurement Technology, University of Linkoping, S-58183 Linkoping, Sweden
Publication Date:
OSTI Identifier:
5421853
DOE Contract Number:  
AC05-84OR21400
Resource Type:
Journal Article
Journal Name:
Physical Review (Section) B: Condensed Matter; (USA)
Additional Journal Information:
Journal Volume: 39:9; Journal ID: ISSN 0163-1829
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; DIELECTRIC TENSOR; OPTICAL PROPERTIES; PLASMONS; SUPERLATTICES; ELECTRICAL PROPERTIES; ELEMENTS; PHYSICAL PROPERTIES; QUASI PARTICLES; SEMIMETALS; TENSORS; 360603* - Materials- Properties

Citation Formats

Sernelius, B E. Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon. United States: N. p., 1989. Web. doi:10.1103/PhysRevB.40.6218.
Sernelius, B E. Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon. United States. https://doi.org/10.1103/PhysRevB.40.6218
Sernelius, B E. 1989. "Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon". United States. https://doi.org/10.1103/PhysRevB.40.6218.
@article{osti_5421853,
title = {Free-carrier absorption from Fibonacci sequences of. delta. -doped layers in silicon},
author = {Sernelius, B E},
abstractNote = {Theoretical results are reported for the dynamical resistivity and free-carrier absorption from Fibonacci sequences of {delta}-doped layers in silicon. Distinct peaks develop, with increasing generation number, in the region of plasmon excitations and the spectra show self-similarity properties. Numerical results are presented for sequences with generation numbers 5, 10, and 15, corresponding to a total number of layers approximately equal to 10, 100, and 1000, respectively.},
doi = {10.1103/PhysRevB.40.6218},
url = {https://www.osti.gov/biblio/5421853}, journal = {Physical Review (Section) B: Condensed Matter; (USA)},
issn = {0163-1829},
number = ,
volume = 39:9,
place = {United States},
year = {Fri Sep 15 00:00:00 EDT 1989},
month = {Fri Sep 15 00:00:00 EDT 1989}
}