The effects of heavy particle radiation on semiconductor devices

Conference · Sun Jan 01 00:00:00 EST 1989

OSTI ID:5411566

Gover, J. E.

Heavy particle radiation can produce upsets in digital circuits as well as trigger burn out or breakdown in power MOSFETs and MNOS nonvolatile memories. Latch-up may also be stimulated by heavy ions. This report covers work done on the effects of heavy particle radiation on PN junctions, CMOS inverters, CMOS latch, MOSFET and non-volatile memories. 15 refs., 3 figs.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5411566
• Report Number(s): SAND-89-2539C; CONF-8911103-1; ON: DE90001679; TRN: 89-031463
• Resource Relation: Conference: Japan Atomic Energy Research Institute symposium, Takasaki (Japan), 6-10 Nov 1989
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
IONS
IRRADIATION
MEMORY DEVICES
MOSFET
P-N JUNCTIONS
CHARGED PARTICLES
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
JUNCTIONS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects