Space-charge-limited currents: Refinements in analysis and applications to a-Si/sub 1-x/Ge/sub x/:H alloys

Journal Article · Tue Nov 01 00:00:00 EST 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331918· OSTI ID:5399684

Weisfield, R L

A new algorithm is described for deriving the density of states N(E) from the Fermi energy E/sub F/ upwards toward the conduction band edge. This refinement in the analysis of space-charge-limited currents (SCLC) enables the accurate determination of N(E) by implicitly accounting for the spatial variations of physical quantities across the thickness of the diode. SCLC is measured in NiCr/n/sup +//a-Si/sub 1-x/Ge/sub x/:H/Pt diode structures. For a-Si:H samples, SCLC values for N(E/sub F/) are compared to those derived from admittance measurements on the same diodes. The two determinations agree in samples where 10/sup 16/

• Research Organization: Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 5399684
• Journal Information: J. Appl. Phys.; (United States), Vol. 54:11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GERMANIUM ALLOYS
ENERGY-LEVEL DENSITY
FERMI LEVEL
SEMICONDUCTOR DIODES
CHARGE TRANSPORT
SILICON ALLOYS
ALGORITHMS
AMORPHOUS STATE
BAND THEORY
ELECTRIC CURRENTS
HYDROGENATION
LIMITING VALUES
PHOTOLUMINESCENCE
SPACE CHARGE
SPUTTERING
ALLOYS
CHEMICAL REACTIONS
CURRENTS
ENERGY LEVELS
LUMINESCENCE
MATHEMATICAL LOGIC
SEMICONDUCTOR DEVICES
360603* - Materials- Properties
420800 - Engineering- Electronic Circuits & Devices- (-1989)