Stimulated emission in strained-layer quantum-well heterostructures
Stimulated emission data are presented on a large variety of strained-layer quantum-well heterostructures (QWH's) and superlattices (SL's) grown by metalorganic chemical vapor deposition (MOCVD). These structures consist of barrier-well combinations of thickness L/sub B/,L/sub z/ < or approx. =150 A made from GaAs-InGaAs, GaAsP-GaAs, and GaAsP-InGaAs. Also employed are higher band-gap confining layers of In/sub x/Al/sub y/Ga/sub 1hyphenx/-yAs, Al/sub y/Ga/sub 1-y/As/sub 1-x/P/sub x/, and Al/sub x/Ga/sub 1-x/As. All of the heterostructures are grown on a GaAs substrate with and, in some cases, without a graded layer. The strain range between 0.2 to 12.5 x 10/sup -3/ is examined. Photopumped, these heterostructures operate as continuous (cw) 300 K lasers, with thresholds of 1.6--7.5 x 10/sup 3/ W/cm/sup 2/, for periods of time between 0.5 to >35 min. Under high-level excitation, the equivalent of J/sub eq/approx.10/sup 3/ A/cm/sup 2/, laser operation fails or is quenched by networks of dislocations (with <110> Burger's vectors) that are generated within the strained-layer region of the QWH's or SL's. These dislocation networks, which are revealed via transmission electron microscopy (TEM), occur at a more rapid rate in higher threshold samples and ones with higher built-in strain. The TEM data show, however, that no heterointerface defects (dislocations) are present in the as-grown strained-layer regions but are present in thick (bulk) graded regions.
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5398185
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 54:11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
STIMULATED EMISSION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY
SUPERLATTICES
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
EPITAXY
EXCITATION
LAYERS
STRAINS
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIMENSIONS
ELECTRON MICROSCOPY
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
LINE DEFECTS
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)