Silicide layer growth rates in Mo/Si multilayers
- Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94550 (United States)
- Department of Mechanical Engineering, Oregon State University, Corvallis, Oregon 97331 (United States)
- Vernon Applied Physics, P.O. Box 10469, Torrance, California 90505 (United States)
- Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)
The thermal stability of sputter-deposited Mo/Si multilayers was investigated by annealing studies at relatively low temperatures ([similar to]250--350 [degree]C) for various times (0.5--3000 h). Two distinct stages of thermally activated Mo/Si interlayer growth were found: a primary surge, followed by a (slower) secondary steady-state growth in which the interdiffusion coefficient is constant. The interdiffusion coefficients for the interlayer formed by deposition of Mo-on-Si are higher than those of the interlayer formed by deposition of Si-on-Mo. Assuming that the activation energy is constant, an extrapolation of our results to ambient temperature finds that interlayer growth is negligible, suggesting long-term thermal stability in soft-x-ray projection lithography applications.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5295150
- Journal Information:
- Applied Optics; (United States), Vol. 32:34; ISSN 0003-6935
- Country of Publication:
- United States
- Language:
- English
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Silicide layer growth rates in Mo/Si multilayers
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Related Subjects
MOLYBDENUM
ANNEALING
SILICON
DIFFUSION
LAYERS
REFLECTIVITY
SOFT X RADIATION
SPUTTERING
TEMPERATURE RANGE 0400-1000 K
THERMODYNAMIC PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
HEAT TREATMENTS
IONIZING RADIATIONS
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
SEMIMETALS
SURFACE PROPERTIES
TEMPERATURE RANGE
TRANSITION ELEMENTS
X RADIATION
360104* - Metals & Alloys- Physical Properties
360606 - Other Materials- Physical Properties- (1992-)