Saddle-field glow-discharge deposition of amorphous semiconductors

Gaspari, F; Sidhu, L S; O`Leary, S K; Zukotynski, S

Title: Saddle-field glow-discharge deposition of amorphous semiconductors

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Abstract

The authors present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.

Authors:

Gaspari, F; Sidhu, L S; O`Leary, S K; Zukotynski, S ^[1]

Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering

Publication Date:: Tue Dec 31 00:00:00 EST 1996

Sponsoring Org.:: Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (Canada)

OSTI Identifier:: 527659

Report Number(s):: CONF-960401-
ISBN 1-55899-323-1; TRN: IM9741%%87

Resource Type:: Book

Resource Relation:: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; SILICON; CARBON; THIN FILMS; SILANES; METHANE; GLOW DISCHARGES; ELECTRODES; IONS; ENERGY; MASS SPECTRA; EXPERIMENTAL DATA

Citation Formats


                    Gaspari, F, Sidhu, L S, O`Leary, S K, and Zukotynski, S. Saddle-field glow-discharge deposition of amorphous semiconductors.  United States: N. p., 1996. 
        Web.

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                    Gaspari, F, Sidhu, L S, O`Leary, S K, & Zukotynski, S. Saddle-field glow-discharge deposition of amorphous semiconductors.  United States.

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                    Gaspari, F, Sidhu, L S, O`Leary, S K, and Zukotynski, S. 1996.  
        "Saddle-field glow-discharge deposition of amorphous semiconductors".  United States.

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@article{osti_527659,

  title        = {Saddle-field glow-discharge deposition of amorphous semiconductors},

  author       = {Gaspari, F and Sidhu, L S and O`Leary, S K and Zukotynski, S},

  abstractNote = {The authors present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/527659},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Dec 31 00:00:00 EST 1996},

  month        = {Tue Dec 31 00:00:00 EST 1996}

}

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