A temperature dependent SPICE macro-model for power MOSFETs

Technical Report · Fri May 01 00:00:00 EDT 1992

OSTI ID:5153564

Pierce, D G

A power MOSFET macro-model for use with the circuit simulator SPICE has been developed suitable for use over the temperature range of {minus}55 to 125{degrees}C. The model is comprised of a single parameter set with the temperature dependence accessed through the SPICE TEMP card. This report describes in detail the development of the model and the extraction algorithms used to obtain model parameters. The extraction algorithms are described in sufficient detail to allow for automated measurements which in turn allows for rapid and cost effective development of an accurate SPICE model for any power MOSFET. 22 refs.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5153564
• Report Number(s): SAND-92-0852; ON: DE92015386
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
ELECTRONIC CIRCUITS
S CODES
MOSFET
TEMPERATURE DEPENDENCE
ALGORITHMS
BREAKDOWN
COMPUTERIZED SIMULATION
LEAKAGE CURRENT
MATHEMATICAL MODELS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
COMPUTER CODES
CURRENTS
ELECTRIC CURRENTS
FIELD EFFECT TRANSISTORS
MATHEMATICAL LOGIC
MOS TRANSISTORS
SEMICONDUCTOR DEVICES
SIMULATION
TEMPERATURE RANGE
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
990200 - Mathematics & Computers