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Title: Theoretical study of the silylboranes

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100257a026· OSTI ID:5133746

The equilibrium structures and stabilities of the silylboranes, (SiH/sub 3/)/sub n/BH/sub 3-n/, n = 1,2,3, are studied by ab initio calculations at the HF/6-31G** level. MP2, MP3, and MP4SDQ/6-13G** //HF/6-13G** calculations show SiH/sub 3/BH/sub 2/ to be stable with respect to dissociation into SiH/sub 2/ and BH/sub 3/, thus ruling out a suggestion that this process leads to polysilane and diborane at ambient temperature. The decomposition of silylborane via a homogeneous bimolecular process is also ruled out at ambient temperature. In fact, the reverse reaction, i.e., the insertion of singlet silene into borane, appears to have no barrier at the HF/3-21G level or at the HF/6-31G** level. Silylboranes are suggested as possible intermediates by which boron is incorporated into amorphous silicon.

Research Organization:
Philadelphia College of Textiles and Science, PA
OSTI ID:
5133746
Journal Information:
J. Phys. Chem.; (United States), Vol. 89:11
Country of Publication:
United States
Language:
English