Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center

Journal Article · Mon Oct 28 00:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106043· OSTI ID:5127649

Rong, F C; Buchwald, W R; Harmatz, M; Poindexter, E H ^[1]; Warren, W L ^[2]

---

1. US Army Electronics Technology and Devices Laboratory, Fort Monmouth, New Jersey (USA)
2. Sandia National Laboratories, Albuquerque, New Mexico (USA)

Arsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for photoquenching is found to be approximately 1.15 eV, which is very close to that observed for the well-known EL2 center in undoped semi-insulating GaAs. However, the thermal recovery temperature is about 200--250 K, much higher than that for the EL2 center.

• OSTI ID: 5127649
• Journal Information: Applied Physics Letters; (United States), Vol. 59:18; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
MAGNETIC RESONANCE
ARSENIC
ELECTRON BEAMS
PARAMAGNETISM
PHYSICAL RADIATION EFFECTS
THERMAL RECOVERY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ELEMENTS
ENHANCED RECOVERY
GALLIUM COMPOUNDS
LEPTON BEAMS
MAGNETISM
PARTICLE BEAMS
PNICTIDES
RADIATION EFFECTS
RECOVERY
RESONANCE
SEMIMETALS
656002* - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)