Chemical preparation of high-field zinc oxide varistors
Technical Report
·
OSTI ID:5101607
Chemical preparation methods were developed for high-field ZnO varistors in which precipitation techniques were used to prepare precursor powders. Varistors were made by sintering uniaxially pressed pellets in the range of 675 to 740/sup 0/C in air. Varistor properties included electric fields(E) in the 10 to 100 kV/cm range at current densities(J) of 5A/cm/sup 2/, nonlinearity coefficients(..cap alpha..) greater than 30 at 2.5 less than or equal to J less than or equal to 5.0 A/cm/sup 2/, and densities in the range of 65 to 99% of theoretical depending both on sintering temperature and composition.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5101607
- Report Number(s):
- SAND-85-0195; ON: DE86001611
- Country of Publication:
- United States
- Language:
- English
Similar Records
Chemical preparation and properties of high-field zinc oxide varistors
Effects of processing chemistry on electrical properties of high field ZnO varistors
A process for the chemical preparation of high-field ZnO varistors
Journal Article
·
Wed Jan 01 00:00:00 EST 1986
· J. Mat. Res.; (United States)
·
OSTI ID:5101607
Effects of processing chemistry on electrical properties of high field ZnO varistors
Conference
·
Tue Jan 01 00:00:00 EST 1985
·
OSTI ID:5101607
A process for the chemical preparation of high-field ZnO varistors
Patent
·
Wed Feb 19 00:00:00 EST 1986
·
OSTI ID:5101607
Related Subjects
42 ENGINEERING
SEMICONDUCTOR RESISTORS
CHEMICAL PREPARATION
COBALT OXIDES
CURRENT DENSITY
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
GRAIN SIZE
MANGANESE OXIDES
MICROSTRUCTURE
PHYSICAL PROPERTIES
SINTERING
ZINC OXIDES
CHALCOGENIDES
COBALT COMPOUNDS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
MANGANESE COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
RESISTORS
SEMICONDUCTOR DEVICES
SIZE
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
SEMICONDUCTOR RESISTORS
CHEMICAL PREPARATION
COBALT OXIDES
CURRENT DENSITY
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
GRAIN SIZE
MANGANESE OXIDES
MICROSTRUCTURE
PHYSICAL PROPERTIES
SINTERING
ZINC OXIDES
CHALCOGENIDES
COBALT COMPOUNDS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
EQUIPMENT
FABRICATION
MANGANESE COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
RESISTORS
SEMICONDUCTOR DEVICES
SIZE
SYNTHESIS
TRANSITION ELEMENT COMPOUNDS
ZINC COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)