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Title: In situ growth rate measurement of selective LPCVD of tungsten

This paper reports on the reflectance measurement during the selective deposition of W on Si covered with an insulator rating proven to be a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurement of the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatment of the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.
Authors:
; ;  [1]
  1. (Dept. of Electrochemistry, Univ. of Twente, 7500 AE Enshede (NL))
Publication Date:
OSTI Identifier:
5099159
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of the Electrochemical Society; (United States); Journal Volume: 138:4
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; FABRICATION; TUNGSTEN; CHEMICAL VAPOR DEPOSITION; ELECTRICAL INSULATORS; ETCHING; MATHEMATICAL MODELS; MEASURING METHODS; REFLECTION; CHEMICAL COATING; DEPOSITION; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; METALS; SEMIMETALS; SURFACE COATING; SURFACE FINISHING; TRANSITION ELEMENTS 360101* -- Metals & Alloys-- Preparation & Fabrication; 360601 -- Other Materials-- Preparation & Manufacture