Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors

Patent · Tue Apr 05 00:00:00 EDT 1988

OSTI ID:5081121

Szabo, L F; Biter, W J

A photovolatic device is described comprising: a light transmissive substrate; an electrically conductive, transparent layer disposed on the substrate as a first electrode; a layer of a first semiconductor disposed on the first electrode; a p-type thin film of a tellurium-containing II-VI semiconductor disposed on the first semiconductor to form a photoresponsive junction with it; and a second electrode contacting the thin film.

• Assignee: Standard Oil Co., Cleveland, OH
• Patent Number(s): US 4735662
• OSTI ID: 5081121
• Resource Relation: Patent File Date: Filed date 6 Jan 1987
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
P-TYPE CONDUCTORS
PHOTOVOLTAIC CELLS
ELECTRIC CONTACTS
ELECTRODES
TELLURIUM ALLOYS
ELECTRICAL PROPERTIES
FABRICATION
LIGHT TRANSMISSION
OPACITY
SUBSTRATES
THIN FILMS
ALLOYS
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
EQUIPMENT
FILMS
MATERIALS
OPTICAL PROPERTIES
PHOTOELECTRIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360603 - Materials- Properties