Numerical simulation of thermal history for Czochralski growth of silicon single crystals
- Hitachi, Ltd. (Japan). Mechanical Engineering Research Lab.
- Tokyo Inst. of Tech. (Japan). Dept. of Mechanical Engineering of Production
- Hitachi, Ltd. (Japan). Kofu Works
A numerical analysis was conducted to study the thermal history of Czochralski growth of large silicon single crystals. The computations were performed for various crystal diameters and emissivities of the crucible inner wall. The analysis predicts the change of temperature distributions in the crystal and the shape of the solid-melt interface. The computed results show the importance of the effects of radiation from the crucible inner wall and the melt-free surface on crystal growth. Also, increasing the crystal diameter decreases the pull speed and increases the concavity of the solid-melt interface into the crystal. The result of this analysis is in good agreement with measurement of the pull rate on production apparatus, and the shape of the crystal-melt interface showed a tendency to agree qualitatively with the observations of X-ray diffraction.
- OSTI ID:
- 5039189
- Journal Information:
- Heat Transfer - Japanese Research; (United States), Vol. 22:4; ISSN 0096-0802
- Country of Publication:
- United States
- Language:
- English
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