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Title: Formation of p-type Cu{sub 3}BiS{sub 3} absorber thin films by annealing chemically deposited Bi{sub 2}S{sub 3}{endash}CuS thin films

Abstract

Formation of the ternary compound Cu{sub 3}BiS{sub 3} during annealing of chemically deposited CuS ({approximately}0.3 {mu}m) films on Bi{sub 2}S{sub 3} film ({approximately}0.1 {mu}m on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra on the films. The formation of Cu{sub 3}BiS{sub 3} (Wittichenite, JCPDS 9-488) is confirmed by the XRD patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4{times}10{sup 4} cm{sup {minus}1} at 2.48 eV or 0.50 {mu}m) and are p-type with electrical conductivity of 10{sup 2}{endash}10{sup 3} {Omega}{sup {minus}1} cm{sup {minus}1}. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated. {copyright} {ital 1997 Materials Research Society.}

Authors:
 [1];  [2]; ;  [1]; ;  [2]
  1. Photovoltaic Systems Group, Laboratorio de Energia Solar-IIM, Universidad Nacional Autonoma de Mexico, Temixco 62580, Morelos (Mexico)
  2. Department of Chemistry, Texas A M University, College Station, Texas 77843 (United States)
Publication Date:
OSTI Identifier:
490181
Resource Type:
Journal Article
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 12; Journal Issue: 3; Other Information: PBD: Mar 1997
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SOLAR ABSORBERS; DEPOSITION; COPPER SULFIDES; THIN FILMS; ANNEALING; CHEMICAL REACTIONS; VISIBLE SPECTRA; ABSORPTION SPECTRA; ELECTRIC CONDUCTIVITY; THERMODYNAMIC PROPERTIES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Nair, P K, Huang, L, Nair, M T, Hu, H, Meyers, E A, and Zingaro, R A. Formation of p-type Cu{sub 3}BiS{sub 3} absorber thin films by annealing chemically deposited Bi{sub 2}S{sub 3}{endash}CuS thin films. United States: N. p., 1997. Web. doi:10.1557/JMR.1997.0099.
Nair, P K, Huang, L, Nair, M T, Hu, H, Meyers, E A, & Zingaro, R A. Formation of p-type Cu{sub 3}BiS{sub 3} absorber thin films by annealing chemically deposited Bi{sub 2}S{sub 3}{endash}CuS thin films. United States. https://doi.org/10.1557/JMR.1997.0099
Nair, P K, Huang, L, Nair, M T, Hu, H, Meyers, E A, and Zingaro, R A. 1997. "Formation of p-type Cu{sub 3}BiS{sub 3} absorber thin films by annealing chemically deposited Bi{sub 2}S{sub 3}{endash}CuS thin films". United States. https://doi.org/10.1557/JMR.1997.0099.
@article{osti_490181,
title = {Formation of p-type Cu{sub 3}BiS{sub 3} absorber thin films by annealing chemically deposited Bi{sub 2}S{sub 3}{endash}CuS thin films},
author = {Nair, P K and Huang, L and Nair, M T and Hu, H and Meyers, E A and Zingaro, R A},
abstractNote = {Formation of the ternary compound Cu{sub 3}BiS{sub 3} during annealing of chemically deposited CuS ({approximately}0.3 {mu}m) films on Bi{sub 2}S{sub 3} film ({approximately}0.1 {mu}m on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra on the films. The formation of Cu{sub 3}BiS{sub 3} (Wittichenite, JCPDS 9-488) is confirmed by the XRD patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4{times}10{sup 4} cm{sup {minus}1} at 2.48 eV or 0.50 {mu}m) and are p-type with electrical conductivity of 10{sup 2}{endash}10{sup 3} {Omega}{sup {minus}1} cm{sup {minus}1}. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated. {copyright} {ital 1997 Materials Research Society.}},
doi = {10.1557/JMR.1997.0099},
url = {https://www.osti.gov/biblio/490181}, journal = {Journal of Materials Research},
number = 3,
volume = 12,
place = {United States},
year = {Sat Mar 01 00:00:00 EST 1997},
month = {Sat Mar 01 00:00:00 EST 1997}
}