Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources

Journal Article · Mon May 08 00:00:00 EDT 1995 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.113154· OSTI ID:45960

Beernink, K J; Thornton, R L; Anderson, G B ^[1]; Emanuel, M A ^[2]

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1. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (United States)
2. Lawrence Livermore National Laboratory, P. O. Box 808, Livermore, California 94551 (United States)

Si diffusion and impurity-induced layer intermixing from a buried impurity source have been studied by transmission electron microscopy and secondary ion mass spectroscopy of isolated, Si-doped GaAs layers in an undoped Al{sub 0.4}Ga{sub 0.6}As/GaAs superlattice and by photoluminescence measurements on Si-doped GaAs quantum wells with undoped Al{sub 0.4}Ga{sub 0.6}As barriers. In annealed samples, the Si profile suggests a Si diffusion process involving multiply ionized column III vacancies. The width of the resulting Si profile and the spatial extent and completeness of intermixing strongly depend on the initial Si concentration in the doped layer.

• Research Organization: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 45960
• Journal Information: Applied Physics Letters, Vol. 66, Issue 19; Other Information: PBD: 8 May 1995
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
SILICON ADDITIONS
ALUMINIUM ARSENIDES
SUPERLATTICES
DOPED MATERIALS
DIFFUSION
INTERFACES
MIXING
TRANSMISSION ELECTRON MICROSCOPY
MASS SPECTROSCOPY
SPATIAL DISTRIBUTION
CRYSTAL DEFECTS
ANNEALING