Electron transport properties of aluminium substituted CuTi amorphous alloys

Journal Article · Thu Jan 30 00:00:00 EST 1997 · International Journal of Modern Physics B

DOI:https://doi.org/10.1142/S0217979297000332· OSTI ID:445416

Bhatnagar, A K ^[1]; Fritsch, G; Haberkern, R; Kandlbinder, M; Lindqvist, P ^[2]; Naugle, D G ^[3]

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1. Univ. of Hyderabad (India). School of Physics
2. Univ. der Bundeswehr Muenchen, Neubiberg (Germany)
3. Texas A and M Univ., College Station, TX (United States). Dept. of Physics

Room temperature electrical resistivity ({rho}) temperature coefficient of resistivity ({alpha}) and Hall coefficient (R{sub H}) of (Cu{sub 1{minus}y}Ti{sub y}){sub 1{minus}x}Al{sub x} amorphous alloys, where y = 0.36, 0.50 and 0.64 and x = 0, 0.05 and 0.10 are presented. The low temperature dependence of resistivity and magnetoresistivity of a-(Cu{sub 0.36}Ti{sub 0.64}){sub 1{minus}x}Al{sub x} are also presented and discussed qualitatively in terms of quantum corrections. It is found that the addition of Al in a Cu{sub 0.36}Ti{sub 0.64} alloy decreases the spin-orbit scattering time {tau}{sub so}.

• OSTI ID: 445416
• Journal Information: International Journal of Modern Physics B, Vol. 11, Issue 3; Other Information: PBD: 30 Jan 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COPPER ALLOYS
TITANIUM ALLOYS
ELECTRIC CONDUCTIVITY
ALUMINIUM ADDITIONS
METALLURGICAL EFFECTS