Tunneling relaxation of holes in double quantum wells with nonideal heteroboundaries
Journal Article
·
· Semiconductors
OSTI ID:441179
- Institute of Semiconductor Physics, Kiev (Ukraine)
This paper presents a calculation of the tunneling relaxation rate of holes in double quantum wells when the holes are scattered at heteroboundary roughnesses. Because of mixing of the light- and heavy-hole states (which are described analytically in the approximation of strongly differing effective masses), the interwell tunneling mechanism changes at the splitting energy of the tunnel-coupled levels increases. The dependence of the tunneling relaxation rate on the splitting energy is compared with the experimental results. 7 refs., 2 figs.
- OSTI ID:
- 441179
- Journal Information:
- Semiconductors, Vol. 29, Issue 9; Other Information: PBD: Sep 1995; TN: Translated from Fizika i Tekhnika Poluprovodnikov; 29: No. 9, 1579-1584(Sep 1995)
- Country of Publication:
- United States
- Language:
- English
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