Strongly localized donor level in oxygen doped gallium nitride

Conference · Thu Aug 01 00:00:00 EDT 1996

OSTI ID:434361

Wetzel, C; Suski, T; Ager, III, J W ^[1]; Fischer, S; Meyer, B K ^[2]; Grzegory, I; Porowski, S ^[3]

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1. Lawrence Berkeley National Lab., CA (United States)
2. Giessen Univ. (Germany). 1. Physikalisches Inst.
3. Polska Akademia Nauk, Warsaw (Poland)

A classification in terms of localization of donor defects in GaN is performed by Raman spectroscopy under large hydrostatic pressure. We observe a significant decrease of free carrier concentration in highly O doped GaN epitaxial films at 22 GPa, indicating the presence of a strongly localized donor defect at large pressure. Monitoring the phonon plasmon coupled mode, we find similarities with results on highly n-type bulk crystals. We refine the model of localized defects in GaN and transfer it to the AlGaN system.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 434361
• Report Number(s): LBNL-39218; CONF-960781-8; ON: DE97001220
• Resource Relation: Conference: International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996; Other Information: PBD: Aug 1996
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
PHYSICAL PROPERTIES
DOPED MATERIALS
CARRIER DENSITY
PRESSURE DEPENDENCE
VERY HIGH PRESSURE
CRYSTAL DEFECTS
ALUMINIUM NITRIDES
OXYGEN ADDITIONS