Power recovery of radiation damaged MOCVD grown indium phosphide on silicon solar cells through argon-ion laser annealing. Master`s thesis
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells.
- Research Organization:
- Naval Postgraduate School, Monterey, CA (United States)
- OSTI ID:
- 420179
- Report Number(s):
- AD-A-315160/2/XAB; TRN: 63580258
- Resource Relation:
- Other Information: DN: Original contains color plates; All DTIC/NTIS reproductions will be in black and white; TH: Master`s thesis; PBD: Jun 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation effects on p+n InP junctions grown by MOCVD
Annealing of irradiated n+p InP buried homojunctions