Scanning internal-photoemission microscopy: An imaging technique to reveal microscopic inhomogeneity at metal-semiconductor interfaces
Conference
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OSTI ID:405548
- Tokyo Metropolitan Univ., Hachiohji, Tokyo (Japan)
We have developed scanning internal-photoemission microscopy (SIPM) which is capable of imaging Schottky-barrier distribution at {open_quotes}buried{close_quotes} metal-semiconductor interfaces. By using this technique, inhomogeneous reaction at annealed interfaces of Ti/Pt/Au/GaAs and epitaxial-Al/Si(111) systems has been studied in relation to their microscopic as well as macroscopic electrical properties.
- OSTI ID:
- 405548
- Report Number(s):
- CONF-951231-; TRN: 96:005795-0046
- Resource Relation:
- Conference: 6. conference on defect recognition and image processing in semiconductors, Estes Park, CO (United States), 3-6 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Defect recognition and image processing in semiconductors 1995; Mickelson, A.R. [ed.]; PB: 380 p.
- Country of Publication:
- United States
- Language:
- English
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