Detection of vacancy defects in gallium arsenide by positron lifetime spectroscopy
Conference
·
OSTI ID:405514
- Helsinki Univ. of Technology, Espoo (Finland); and others
Vacancy-related native defects were studied in semi-insulating GaAs by positron life-time measurements. Both gallium and arsenic vacancies are observed at concentrations of 10{sup 15} - 10{sup 16} cm{sup -3}. The experiments in the dark after illumination manifest the vacancy nature of the metastable state of the EL2 center.
- OSTI ID:
- 405514
- Report Number(s):
- CONF-951231-; TRN: 96:005795-0010
- Resource Relation:
- Conference: 6. conference on defect recognition and image processing in semiconductors, Estes Park, CO (United States), 3-6 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Defect recognition and image processing in semiconductors 1995; Mickelson, A.R. [ed.]; PB: 380 p.
- Country of Publication:
- United States
- Language:
- English
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