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Title: A modeling study of GaN growth by MOVPE

A model for the growth of gallium nitride in a vertical metalorganic vapor phase epitaxy reactor is presented. For a mixture of non-dilute gases, the flow temperature and concentration profiles are predicted. The results show that the growth of GaN epilayers is through an intermediate adduct of TMG and ammonia. Growth rates are predicted based on simple reaction mechanisms and compared with those obtained experimentally. Loss of adduct species due to polymerization leads to lowering in growth rate. An attempt to quantify loss of reacting species is made based on experimentally observed growth rates.
Authors:
;  [1] ; ;  [2]
  1. Univ. of Wisconsin, Madison, WI (United States). Dept. of Chemical Engineering
  2. Advanced Technology Materials, Danbury, CT (United States)
Publication Date:
OSTI Identifier:
394961
Report Number(s):
CONF-951155--
ISBN 1-55899-298-7; TRN: IM9648%%38
Resource Type:
Conference
Resource Relation:
Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Gallium nitride and related materials; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Dupuis, R.D. [ed.] [Univ. of Texas, Austin, TX (United States)]; Nakamura, S. [ed.] [Nichia Chemical Industries, Tokushima (Japan)]; Edmond, J.A. [ed.] [Cree Research, Inc., Durham, NC (United States)]; PB: 993 p.; Materials Research Society symposium proceedings, Volume 395
Publisher:
Materials Research Society, Pittsburgh, PA (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; GALLIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; ELECTRONIC EQUIPMENT; SEMICONDUCTOR MATERIALS; MATHEMATICAL MODELS; DIFFERENTIAL EQUATIONS; FINITE ELEMENT METHOD; HEAT TRANSFER; GAS FLOW; MASS TRANSFER; CHEMICAL REACTIONS; ORGANOMETALLIC COMPOUNDS; HYDROGEN; AMMONIA; COMPUTER CALCULATIONS