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Title: Process for forming retrograde profiles in silicon

A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
Authors:
;
Publication Date:
OSTI Identifier:
379937
Report Number(s):
US 5,565,377/A/
PAN: US patent application 8-329,959
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 15 Oct 1996
Research Org:
University of California
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; CRYSTAL DOPING; MELTING; AMBIENT TEMPERATURE; LASER RADIATION; SURFACE TREATMENTS; MORPHOLOGY