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Title: Reticle blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

We report on growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system designed for EUVL reticle blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm dia (100) oriented Si wafer substrates using ion beam sputter deposition. Added defects, measured by optical scattering, correspond to defect densities of 2x10{sup -2}/cm{sup 2}. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}.
Authors:
; ; ;  [1] ; ; ; ; ;  [2]
  1. Lawrence Livermore National Lab., CA (United States)
  2. Veeco Instruments, Inc., Plainview, NY (United States)
Publication Date:
OSTI Identifier:
378644
Report Number(s):
UCRL-JC--123009; CONF-9604150--3
ON: DE96014135
DOE Contract Number:
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: Optical Society of America meeting on extreme ultraviolet lithography, Boston, MA (United States), 29 Apr - 3 May 1996; Other Information: PBD: 24 Jun 1996
Research Org:
Lawrence Livermore National Lab., CA (United States)
Sponsoring Org:
USDOE, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
44 INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS; MIRRORS; MOLYBDENUM; DEPOSITION; SILICON; MASKING; REFLECTIVE COATINGS; X RADIATION; EXTREME ULTRAVIOLET RADIATION