Boron-enhanced diffusion of boron from ultralow-energy ion implantation
- Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050&hthinsp;{degree}C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1{percent} and 10{percent}, though it appears to be closer to 1{percent} for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3{times}10{sup 14} and 1{times}10{sup 15} cm{sup {minus}2}. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 341183
- Journal Information:
- Applied Physics Letters, Vol. 74, Issue 17; Other Information: PBD: Apr 1999
- Country of Publication:
- United States
- Language:
- English
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