Growth, characterization and spectroscopic investigations of InI crystals for optical and radiation detector applications
Conference
·
OSTI ID:323902
- Radiation Monitoring Devices, Inc., Watertown, MA (United States)
- National Renewable Energy Lab., Golden, CO (United States)
Single crystals of InI (E{sub g} = 2.01 eV at 300 K) have been grown by vertical Bridgman technique using zone refined (ZR) starting materials. The quality of the grown crystal has been evaluated by X-ray diffraction (XRD), Electron probe microanalysis (EPMA) and Photoelectron spectroscopy (XPS). Chemically etched crystal wafer has been used to fabricate optical and nuclear detectors. The results are presented in this paper.
- Sponsoring Organization:
- National Insts. of Health, Bethesda, MD (United States)
- OSTI ID:
- 323902
- Report Number(s):
- CONF-971201-; TRN: 99:004428
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
- Country of Publication:
- United States
- Language:
- English
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