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Title: Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process

A potentially low-cost process for forming and passivating a selective emitter. The process uses a plasma etch of the heavily doped emitter to improve its performance. The grids of the solar cell are used to mask the plasma etch so that only the emitter in the region between the grids is etched, while the region beneath the grids remains heavily doped for low contact resistance. This process is potentially low-cost because it requires no alignment. After the emitter etch, a silicon nitride layer is deposited by plasma-enhanced, chemical vapor deposition, and the solar cell is annealed in a forming gas. 5 figs.
Authors:
; ;
Publication Date:
OSTI Identifier:
321276
Report Number(s):
US 5,871,591/A/
PAN: US patent application 8-742,378
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 16 Feb 1999
Research Org:
Sandia Corporation
Sponsoring Org:
USDOE, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; PASSIVATION; DOPED MATERIALS; CHEMICAL VAPOR DEPOSITION; ANNEALING