Study of proton radiation effects on analog IC designed for high energy physics in a BICMOS-JFET radhard SOI technology
- IN2P3/CPPM, Marseille (France); and others
The authors present experimental results from a fast charge amplifier and a wideband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI technology and irradiated up to 4.5 {times} 10{sup 14} protons/cm{sup 2}. In parallel, they have irradiated elementary transistors. These components were biased and electrical measurements were done 30 min after beam stop. By evaluating variations of main SPICE parameters, i.e., threshold voltage shift for CMOS and current gain variation for bipolar transistors, they have simulated the wideband analog buffer at different doses. These SPICE simulations are in good agreement with measured circuit degradations. The behavior of the charge amplifier is consistent with extraction of transconductance and pinch-off voltage shift of the PJFET.
- OSTI ID:
- 32025
- Report Number(s):
- CONF-940726-; ISSN 0018-9499; TRN: IM9517%%320
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 41, Issue 6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; Other Information: PBD: Dec 1994
- Country of Publication:
- United States
- Language:
- English
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