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Title: Ultrasonic characterization of microwave joined silicon carbide/silicon carbide

High frequency (50--150 MHz), ultrasonic immersion testing has been used to characterize the surface and interfacial joint conditions of microwave bonded, monolithic silicon carbide (SiC) materials. The high resolution ultrasonic C-scan images point to damage accumulation after thermal cycling. Image processing was used to study the effects of the thermal cycling on waveform shape, amplitude and distribution. Such information is useful for concurrently engineering material fabrication processes and suitable nondestructive test procedures.
Authors:
;
Publication Date:
OSTI Identifier:
319834
Report Number(s):
KAPL-P-000157; K-97032; CONF-970568-
ON: DE99001879; TRN: 99:003946
DOE Contract Number:
AC12-76SN00052
Resource Type:
Technical Report
Resource Relation:
Conference: 99. annual meeting of the American Ceramic Society, Cincinnati, OH (United States), 4-7 May 1997; Other Information: PBD: May 1997
Research Org:
Knolls Atomic Power Lab., Schenectady, NY (United States)
Sponsoring Org:
USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; JOINING; ULTRASONIC TESTING; SILICON CARBIDES; ADHESIVES; MICROWAVE HEATING; IMAGE PROCESSING; THERMAL CYCLING; EXPERIMENTAL DATA