Is an arsenic-antisite-defect a constituent of hydrogen-related metastable defects (M3/M4) in GaAs?

Book · Thu Dec 31 00:00:00 EST 1998

OSTI ID:308116

Okumura, T; Shinagawa, T ^[1]

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1. Tokyo Metropolitan Univ., Hachioji, Tokyo (Japan). Dept. of Electrical Engineering

The hydrogen-related metastable defects (M3/M4) in n-GaAs, first found by Buchwald et al., were introduced only in the crystals containing the EL2 center. Off-center oxygen (=EL3), could not be responsible for their formation. A quantitative analysis with the samples exposed to atomic hydrogen showed that the M4 defect consisted of two different configurations. One of them did couple with M3, but is latent in the as-exposed state. It was formed after bias annealing at higher temperatures, such as 420 K. The other part of the M4 defect (M4{sup *}) existed at room temperature and after annealing at 513K, but disappeared and reappeared upon forward- and reverse-bias annealings, respectively.

• OSTI ID: 308116
• Report Number(s): CONF-980405-; TRN: IM9907%%42
• Resource Relation: Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Hydrogen in semiconductors and metals; Nickel, N.H. [ed.] [Hahn-Meitner-Inst., Berlin (Germany)]; Jackson, W.B. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Bowman, R.C. [ed.] [Jet Propulsion Lab., Pasadena, CA (United States)]; Leisure, R.G. [ed.] [Colorado State Univ., Fort Collins, CO (United States)]; PB: 469 p.; Materials Research Society symposium proceedings, Volume 513
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HYDROGEN
CRYSTAL DEFECTS
GALLIUM ARSENIDES
PASSIVATION
ARSENIC
EXPERIMENTAL DATA