Modeling of substrate bias effect on the compositional variations in sputtered-deposited TiB{sub 2+x} diffusion barrier thin films
- Ben-Gurion Univ. of the Negev, Beer-Sheva (Israel). Dept. of Materials Engineering
Sputter-deposited titanium boride diffusion barrier layers have been found to be boron enriched when r.f. substrate bias was applied. In the present experiments titanium boride was deposited by co-sputtering from Ti and B pure targets in Ar discharge and the voltage of r.f. self-bias was in the range of 100--250 V. Films deposited were found by Auger electron spectroscopy to be B enriched with increasing bias voltage at constant Ti and B sputtering rates. A model of the sputter-deposition conditions was developed to predict the composition and the thickness of the growing film. The model explains the experimental results indicating that B enrichment is mainly a result of differential resputtering of the components from the growing film by energetic Ar ions capture from the r.f. discharge.
- OSTI ID:
- 305588
- Report Number(s):
- CONF-980405-; TRN: IM9906%%268
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Computational and mathematical models of microstructural evolution; Bullard, J.W. [ed.] [Univ. of Illinois, Urbana, IL (United States)]; Chen, L.Q. [ed.] [Pennsylvania State Univ., University Park, PA (United States)]; Kalia, R.K. [ed.] [Louisiana State Univ., Baton Rouge, LA (United States)]; Stoneham, A.M. [ed.] [University College London (United Kingdom)]; PB: 194 p.; Materials Research Society symposium proceedings, Volume 529
- Country of Publication:
- United States
- Language:
- English
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