Development of mechanical stress in CuNi(Mn) films during temperature ramping: Related mechanisms
- Inst. of Solid State and Materials Research, Dresden (Germany)
This paper focuses on the development of biaxial stress in Cu{sub 0.57}Ni{sub 0.42}Mn{sub 0.01} thin films during annealing in Ar and, for comparison, in vacuum. Besides stress-temperature measurements also resistance-temperature investigations as well as chemical and microstructural characterization by Auger electron spectroscopy, scanning and transmission electron microscopy, and X-ray diffraction were carried out. To explain the stress evolution, atomic rearrangement (excess-vacancy annihilation, grain-boundary relaxation, and shrinkage of grain-boundary voids) and oxidation were considered. Up to 250--300 C grain-boundary relaxation was found to be the dominating process. A sharp transition from compressive to tensile stress between 300 C and 380 C is explained by the formation of a NiO surface layer.
- OSTI ID:
- 305538
- Report Number(s):
- CONF-971201-; TRN: IM9906%%218
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-films -- Stresses and mechanical properties 7; Cammarata, R.C. [ed.] [Naval Research Lab., Washington, DC (United States)]; Nastasi, M. [ed.] [Los Alamos National Lab., NM (United States)]; Busso, E.P. [ed.] [Univ. of London (United Kingdom). Imperial Coll.]; Oliver, W.C. [ed.] [Nano Instruments, Inc., Oak Ridge, TN (United States)]; PB: 663 p.; Materials Research Society symposium proceedings, Volume 505
- Country of Publication:
- United States
- Language:
- English
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