Thin film poly-Si solar cell with ``STAR structure`` on glass substrate fabricated at low temperature
Abstract
The performances of thin film poly-Si solar cells with a thickness of less than 5 {micro}m on a glass substrate have been systematically investigated as a function of thickness. The cell of glass/back reflector/n-i-p poly-Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i-layer was fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 3.5 {micro}M and 2.5 {micro}m demonstrated an intrinsic efficiency of 9.8%, as independently confirmed by Japan Quality Assurance. The optical confinement effect explains the excellent spectral response at long wavelength for the cells through the PC1D analysis. The higher sensitivity at long-wavelength of the cell appeared in quantum efficiency curves is well correlated to the result of reflectance measurement. The open circuit voltage of 0.526 mV and the efficiency of 9.3% has been achieved for the cell with a thickness of 1.5 {micro}m, which was proved to be entirely stable with respect to the light-soaking. The stabilized efficiency of the developed a-Si:H/poly-Si/poly-Si stacked solar cell exhibits the efficiency of 11.5%.
- Authors:
-
- Kaneka Corp., Kobe (Japan). Central Research Labs.
- Publication Date:
- Sponsoring Org.:
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- OSTI Identifier:
- 304324
- Report Number(s):
- CONF-970953-
Journal ID: ISSN 0160-8371; TRN: IM9905%%16
- Resource Type:
- Book
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; SILICON SOLAR CELLS; PERFORMANCE; MORPHOLOGY; THICKNESS; QUANTUM EFFICIENCY; SPECTRAL RESPONSE; OPTICAL PROPERTIES; ELECTRICAL PROPERTIES; EXPERIMENTAL DATA
Citation Formats
Yamamoto, Kenji, Yoshimi, Masashi, Suzuki, Takayuki, Okamoto, Yoshifumi, Tawada, Yuko, and Nakajima, Akihiko. Thin film poly-Si solar cell with ``STAR structure`` on glass substrate fabricated at low temperature. United States: N. p., 1997.
Web.
Yamamoto, Kenji, Yoshimi, Masashi, Suzuki, Takayuki, Okamoto, Yoshifumi, Tawada, Yuko, & Nakajima, Akihiko. Thin film poly-Si solar cell with ``STAR structure`` on glass substrate fabricated at low temperature. United States.
Yamamoto, Kenji, Yoshimi, Masashi, Suzuki, Takayuki, Okamoto, Yoshifumi, Tawada, Yuko, and Nakajima, Akihiko. 1997.
"Thin film poly-Si solar cell with ``STAR structure`` on glass substrate fabricated at low temperature". United States.
@article{osti_304324,
title = {Thin film poly-Si solar cell with ``STAR structure`` on glass substrate fabricated at low temperature},
author = {Yamamoto, Kenji and Yoshimi, Masashi and Suzuki, Takayuki and Okamoto, Yoshifumi and Tawada, Yuko and Nakajima, Akihiko},
abstractNote = {The performances of thin film poly-Si solar cells with a thickness of less than 5 {micro}m on a glass substrate have been systematically investigated as a function of thickness. The cell of glass/back reflector/n-i-p poly-Si/ITO is well characterized by the structure of naturally surface texture and enhanced absorption with a back reflector (STAR), where the active i-layer was fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 3.5 {micro}M and 2.5 {micro}m demonstrated an intrinsic efficiency of 9.8%, as independently confirmed by Japan Quality Assurance. The optical confinement effect explains the excellent spectral response at long wavelength for the cells through the PC1D analysis. The higher sensitivity at long-wavelength of the cell appeared in quantum efficiency curves is well correlated to the result of reflectance measurement. The open circuit voltage of 0.526 mV and the efficiency of 9.3% has been achieved for the cell with a thickness of 1.5 {micro}m, which was proved to be entirely stable with respect to the light-soaking. The stabilized efficiency of the developed a-Si:H/poly-Si/poly-Si stacked solar cell exhibits the efficiency of 11.5%.},
doi = {},
url = {https://www.osti.gov/biblio/304324},
journal = {},
issn = {0160-8371},
number = ,
volume = ,
place = {United States},
year = {Wed Dec 31 00:00:00 EST 1997},
month = {Wed Dec 31 00:00:00 EST 1997}
}