18.5% efficient first-generation MIS inversion-layer silicon solar cells
- Inst. fuer Solarenergieforschung Hameln/Emmerthal, Emmerthal (Germany)
In this paper, recent progress in the development of high-efficiency metal-insulator-semiconductor inversion-layer (MIS-IL) silicon solar cells at ISFH is presented. The authors fabricated MIS-IL solar cells showing independently confirmed energy conversion efficiencies of up to 18.5%. This represents the highest value reported to date for MIS-IL silicon cells. The increase in cell efficiency has been possible by improvements along several lines: (1) reduced perimeter recombination losses, (2) a reduced contact resistance of the MSI front grid, and (3) reduced rear surface recombination losses. The cells are characterized in detail and design modifications for further improvements towards 20% efficiency are presented.
- OSTI ID:
- 302428
- Report Number(s):
- CONF-970953-; TRN: IM9904%%216
- Resource Relation:
- Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
- Country of Publication:
- United States
- Language:
- English
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