Forward and reverse characteristics of irradiated MOSFETs

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.510715· OSTI ID:277713

Paccagnella, A; Ceschia, M ^[1]; Verzellesi, G; Dalla Betta, G F; Soncini, G ^[2]; Bellutti, P ^[3]; Fuochi, P G ^[4]

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1. Univ. di Padova (Italy). Dipt. di Elettronica e Informatica
2. Univ. di Trento, Mesiano (Italy). Dipt. di Ingegneria dei Materiali
3. IRST, Povo (Italy)
4. CNR FRAE, Bologna (Italy)

pMOSFETs biased with V{sub gs} < V{sub gd} during Co{sup 60} {gamma} irradiation have shown substantial differences between the forward and reverse subthreshold characteristics, induced by a non-uniform charge distribution in the gate oxide. Correspondingly, modest differences have been observed in the over-threshold I-V characteristics. After irradiation, the forward subthreshold curves can shift at higher or lower gate voltages than the reverse ones. The former behavior has been observed in long-channel devices, in agreement with the classical MOS theory and numerical simulations. The latter result has been obtained in short-channel devices, and it has been correlated to a parasitic punch-through conduction mechanism.

• OSTI ID: 277713
• Report Number(s): CONF-9509107-; ISSN 0018-9499; TRN: 96:018151
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 43, Issue 3Pt1; Conference: 3. European symposium on radiation and its effects on components and systems (RADECS 95), Arcachon (France), 18-22 Sep 1995; Other Information: PBD: Jun 1996
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
MOSFET
PHYSICAL RADIATION EFFECTS
COBALT 60
GAMMA RADIATION
ELECTRICAL PROPERTIES
CHARGE COLLECTION
SILICON
SILICON OXIDES