Effect of deposition condition and post growth irradiation treatment on the physical properties of diamond-like carbon films
Conference
·
OSTI ID:230145
- Institute for Superhard Materials, Kiev (Ukraine)
- Institute for Semicond. Physics, Kiev (Ukraine)
Effect of the RF (13.56 MHz) amplitude (Usa) bias voltage on the physical properties of the films has been examined. Relation between the properties of the films and growth conditions were obtained. Bias voltage and gas composition have a marked influence on the properties of prepared films. Nitrogen implantation of diamond-like carbon (DLC) films improves essentially mechanical properties (increasing of the hardness and Young`s modulus more than two times), which correlates with changes of the optical properties, namely, decreasing of optical band gap and increasing of refractive index of the implanted layer.
- OSTI ID:
- 230145
- Report Number(s):
- CONF-950840-; TRN: 96:000433-0145
- Resource Relation:
- Conference: International conference on applications of diamond films and related materials, Gaithersburg, MD (United States), 21-24 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of Applications of diamond films and related materials: Third international conference; Feldman, A.; Yarbrough, W.A.; Murakawa, Masao; Tzeng, Yonhua; Yoshikawa, Masanori [eds.]; PB: 973 p.
- Country of Publication:
- United States
- Language:
- English
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