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Title: A two-dimensional numerical model of gas mixing and deposition in a rotating disk CVD reactor

Gas phase transport with mixing and surface chemistry is studied in an axisymmetric, isothermal rotating disk chemical vapor deposition reactor. A simple one-step surface reaction is used to model deposition of gallium on the rotating surface. Partitioning of the inlet flow into separate gas streams of different species can lead to nonuniform deposition on the growth surface. The nonuniformity is caused by incomplete radial diffusion of gas species; depending on reactor temperature and pressure it can be worsened by large buoyant flow instabilities. The nonuniformity is relatively insensitive to the magnitude of the specified sticking coefficient.
Authors:
;  [1] ;  [2]
  1. Sandia National Labs., Livermore, CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
Publication Date:
OSTI Identifier:
226425
Report Number(s):
SAND--96-8555C; CONF-960502--8
ON: DE96009788; TRN: 96:002811
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: 1996
Research Org:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org:
USDOE, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; 36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; MATHEMATICAL MODELS; GALLIUM; GASES; MIXING; ROTATION; GAS FLOW; CHEMICAL REACTORS