A two-dimensional numerical model of gas mixing and deposition in a rotating disk CVD reactor

Conference · Mon Apr 01 00:00:00 EST 1996

OSTI ID:226425

Winters, W S; Evans, G H ^[1]; Greif, R ^[2]

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1. Sandia National Labs., Livermore, CA (United States)
2. Univ. of California, Berkeley, CA (United States)

Gas phase transport with mixing and surface chemistry is studied in an axisymmetric, isothermal rotating disk chemical vapor deposition reactor. A simple one-step surface reaction is used to model deposition of gallium on the rotating surface. Partitioning of the inlet flow into separate gas streams of different species can lead to nonuniform deposition on the growth surface. The nonuniformity is caused by incomplete radial diffusion of gas species; depending on reactor temperature and pressure it can be worsened by large buoyant flow instabilities. The nonuniformity is relatively insensitive to the magnitude of the specified sticking coefficient.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 226425
• Report Number(s): SAND-96-8555C; CONF-960502-8; ON: DE96009788; TRN: 96:002811
• Resource Relation: Conference: 189. meeting of the Electrochemical Society (ECS), Los Angeles, CA (United States), 5-10 May 1996; Other Information: PBD: 1996
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
MATHEMATICAL MODELS
GALLIUM
GASES
MIXING
ROTATION
GAS FLOW
CHEMICAL REACTORS