Dynamics of the cascade capture of electrons by charged donors in GaAs and InP
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
The times for the cascade capture of an electron by a charged impurity have been calculated for pulsed and stationary excitations of impurity photoconductivity in GaAs and InP. The characteristic capture times under pulsed and continuous excitations are shown to differ noticeably both from each other and from the value given by the Abakumov–Perel–Yassievich formula for a charged impurity concentration greater than 10{sup 10} cm{sup –3}. The cause of this difference has been established. The Abakumov–Perel–Yassievich formula for the cascade capture cross section in the case of stationary excitation has been generalized. The dependences of the cascade capture rate on the charged impurity concentration in GaAs and InP have been found for three temperatures in the case of pulsed excitation.
- OSTI ID:
- 22617208
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 123, Issue 2; Other Information: Copyright (c) 2016 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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