Magnetic and magneto-transport studies of substrate effect on the martensitic transformation in a NiMnIn shape memory alloy

Journal Article · Sun May 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4943537· OSTI ID:22611765

Sokolov, Andrei ^[1]; Kirianov, Eugene; Zlenko, Albina ^[2]; Quetz, Abdiel; Aryal, Anil; Pandey, Sudip; Dubenko, Igor; Ali, Naushad ^[3]; Stadler, Shane ^[4]; Al-Aqtash, Nabil; Sabirianov, Renat ^[5]

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1. Department of Physics and Astronomy, University of Nebraska at Lincoln, Lincoln, NE 68588 (United States)
2. Lincoln South West High School, Lincoln, NE 68512 (United States)
3. Department of Physics, Southern Illinois University, Carbondale, IL 62901 (United States)
4. Department of Physics & Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States)
5. Department of Physics, University of Nebraska at Omaha, Omaha, NE 68182 (United States)

The effect of substrates on the magnetic and transport properties of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} ultra-thin films were studied theoretically and experimentally. High quality 8-nm films were grown by laser-assisted molecular beam epitaxy deposition. Magneto-transport measurements revealed that the films undergo electronic structure transformation similar to those of bulk materials at the martensitic transformation. The temperature of the transformation depends strongly on lattice parameters of the substrate. To explain this behavior, we performed DFT calculations on the system and found that different substrates change the relative stability of the ferromagnetic (FM) austenite and ferrimagnetic (FiM) martensite states. We conclude that the energy difference between the FM austenite and FiM martensite states in Ni{sub 2}Mn{sub 1.5}In{sub 0.5} films grown on MgO (001) substrates is ΔE = 0.20 eV per NiMnIn f.u, somewhat lower compared to ΔE = 0.24 eV in the bulk material with the same lattice parameters. When the lattice parameters of Ni{sub 2}Mn{sub 1.5}In{sub 0.5} film have values close to those of the MgO substrate, the energy difference becomes ΔE = 0.08 eV per NiMnIn f.u. These results suggest the possibility to control the martensitic transition in thin films through substrate engineering.

• OSTI ID: 22611765
• Journal Information: AIP Advances, Vol. 6, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AUSTENITE
COMPUTERIZED SIMULATION
DENSITY FUNCTIONAL METHOD
ELECTRONIC STRUCTURE
INDIUM COMPOUNDS
LATTICE PARAMETERS
MAGNETIC PROPERTIES
MAGNETORESISTANCE
MANGANESE COMPOUNDS
MARTENSITE
MARTENSITIC STEELS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NICKEL COMPOUNDS
PHASE TRANSFORMATIONS
SHAPE MEMORY EFFECT
TEMPERATURE DEPENDENCE
TERNARY ALLOY SYSTEMS
THIN FILMS
TRANSITION TEMPERATURE