Spin-filter and spin-gapless semiconductors: The case of Heusler compounds

Journal Article · Sun May 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4943761· OSTI ID:22611728

Galanakis, I. ^[1]; Özdoğan, K. ^[2]; Şaşıoğlu, E. ^[3]

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1. Department of Materials Science, School of Natural Sciences, University of Paras, GR-26504 Patra (Greece)
2. Department of Physics, Yildiz Technical University, 34210 Istanbul (Turkey)
3. Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany and Department of Physics, Fatih University, 34500, Büyükçekmece, Istanbul (Turkey)

We review our recent first-principles results on the inverse Heusler compounds and the ordered quaternary (also known as LiMgPdSn-type) Heusler compounds. Among these two subfamilies of the full-Heusler compounds, several have been shown to be magnetic semiconductors. Such material can find versatile applications, e.g. as spin-filter materials in magnetic tunnel junctions. Finally, a special case are the spin-gapless semiconductors, where the energy gap at the Fermi level for the one spin-direction is almost vanishing, offering novel functionalities in spintronic/magnetoelectronic devices.

• OSTI ID: 22611728
• Journal Information: AIP Advances, Vol. 6, Issue 5; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPUTERIZED SIMULATION
ENERGY GAP
FERMI LEVEL
FILTERS
HEUSLER ALLOYS
MAGNETIC SEMICONDUCTORS
MAGNETIC TUNNEL JUNCTIONS
REVIEWS
SPIN