Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes
- R&D Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083 (China)
To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.
- OSTI ID:
- 22611677
- Journal Information:
- AIP Advances, Vol. 6, Issue 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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