Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

Journal Article · Fri Apr 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4946850· OSTI ID:22611667

Su, Dan; Dou, Xiuming; Wu, Xuefei; Liao, Yongping; Zhou, Pengyu; Ding, Kun; Ni, Haiqiao; Niu, Zhichuan; Zhu, Haijun; Jiang, Desheng; Sun, Baoquan ^[1]

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1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.

• OSTI ID: 22611667
• Journal Information: AIP Advances, Vol. 6, Issue 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APPROXIMATIONS
BINDING ENERGY
CRYOSTATS
EMISSION
EXCITONS
FINE STRUCTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTONS
QUANTUM DOTS
QUANTUM ENTANGLEMENT
RED SHIFT
STRESSES
SYMMETRY
TUNING