skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Intra- and inter-layer charge redistribution in biased bilayer graphene

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.4944815· OSTI ID:22611619
; ; ; ;  [1]
  1. Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002 (China)

We investigate the spatial redistribution of the electron density in bilayer graphene in the presence of an interlayer bias within density functional theory. It is found that the interlayer charge redistribution is inhomogeneous between the upper and bottom layers and the transferred charge from the upper layer to the bottom layer linearly increases with the external voltage which further makes the gap at K point linearly increase. However, the band gap will saturate to 0.29 eV in the strong-field regime, but it displays a linear field dependence at the weak-field limit. Due to the AB-stacked way, two carbon atoms per unit cell in the same layer are different and there is also a charge transfer between them, making the widths of π valence bands reduced. In the bottom layer, the charge transfers from the direct atoms which directly face another carbon atom to the indirect atoms facing the center of the hexagon on the opposite layer, while the charge transfers from the indirect atoms to the direct atoms in the upper layer. Furthermore, there is a diploe between the upper and bottom layers which results in the reduction of the interlayer hopping interaction.

OSTI ID:
22611619
Journal Information:
AIP Advances, Vol. 6, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
Country of Publication:
United States
Language:
English