Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore)
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, 08-03 Innovis, Singapore 138634 (Singapore)
We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferromagnet bilayer systems, and comparable to that of NiFe/Pt bilayers. The spin Hall magnetoresistance shows a non-monotonic dependence on the thicknesses of both FeMn and Pt. The former can be accounted for by the thickness dependence of net magnetization in FeMn thin films, whereas the latter is mainly due to spin accumulation and diffusion in Pt. Through analysis of the Pt thickness dependence, the spin Hall angle, spin diffusion length of Pt and the real part of spin mixing conductance were determined to be 0.2, 1.1 nm, and 5.5 × 10{sup 14} Ω{sup −1}m{sup −2}, respectively. The results corroborate the spin orbit torque effect observed in this system recently.
- OSTI ID:
- 22611544
- Journal Information:
- AIP Advances, Vol. 6, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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