Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

Journal Article · Fri Jul 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4959595· OSTI ID:22611447

Doan, T. C.; Li, J.; Lin, J. Y.

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

• OSTI ID: 22611447
• Journal Information: AIP Advances, Vol. 6, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON 10
BORON NITRIDES
CHARGE COLLECTION
DETECTION
EFFICIENCY
EPITAXY
EQUIPMENT
FISSILE MATERIALS
LAYERS
NEUTRON DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
THERMAL NEUTRONS
ULTRAVIOLET RADIATION