Scanning nuclear electric resonance microscopy using quantum-Hall-effect breakdown

Journal Article · Fri Jul 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4960430· OSTI ID:22611425

Tomimatsu, T.; Shirai, S.; Taninaka, S.; Nagase, K.; Sato, K.; Hirayama, Y. ^[1]

---

1. Graduate School of Sciences, Tohoku University, Sendai 980-8578 (Japan)

We present a scanning nuclear-spin resonance (NSR) method that incorporates resistive detection with electric-field induced NSR locally excited by a scanning metallic probe. In the quantum-Hall effect breakdown regime, NSR intensity mapping at both the fundamental NSR frequency f{sub 75As} and twice the frequency 2f{sub 75As} demonstrates the capability to probe the distribution of nuclear polarization, particularly in a semiconductor quantum well. We find that f{sub 75As} NSR excitation drives not only local NSR but also spatially overlapped nonlocal NSR, which suppresses the maximum intensity of local NSR, while the 2f{sub 75As} NSR yields purely local excitation conferring a larger intensity.

• OSTI ID: 22611425
• Journal Information: AIP Advances, Vol. 6, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BREAKDOWN
DETECTION
DISTRIBUTION
ELECTRIC FIELDS
ELECTRIC RESONANCE
EXCITATION
HALL EFFECT
MICROSCOPY
NUCLEAR MAGNETIC RESONANCE
POLARIZATION
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPIN