Negative charge trapping effects in Al{sub 2}O{sub 3} films grown by atomic layer deposition onto thermally oxidized 4H-SiC
- Consiglio Nazionale delle Ricerche - Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona industriale – 95121 Catania (Italy)
This letter reports on the negative charge trapping in Al{sub 2}O{sub 3} thin films grown by atomic layer deposition onto oxidized silicon carbide (4H-SiC). The films exhibited a permittivity of 8.4, a breakdown field of 9.2 MV/cm and small hysteresis under moderate bias cycles. However, severe electron trapping inside the Al{sub 2}O{sub 3} film (1 × 10{sup 12} cm{sup −2}) occurs upon high positive bias stress (>10 V). Capacitance-voltage measurements at different temperatures and stress conditions have been used to determine an activation energy of 0.1 eV. The results provide indications on the possible nature of the trapping defects and, hence, on the strategies to improve this technology for 4H-SiC devices.
- OSTI ID:
- 22611422
- Journal Information:
- AIP Advances, Vol. 6, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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