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Title: Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

Abstract

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably resultmore » in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.« less

Authors:
; ;  [1]
  1. Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22611389
Resource Type:
Journal Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2158-3226
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; FILMS; GALLIUM NITRIDES; IMPURITIES; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PHOTODETECTORS; RAMAN EFFECT; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; SURFACES; TIME DEPENDENCE; ULTRAVIOLET RADIATION; WAVELENGTHS; X-RAY DIFFRACTOMETERS; DARK CURRENT

Citation Formats

Velazquez, R., Rivera, M., Feng, P., E-mail: p.feng@upr.edu, and Aldalbahi, A. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors. United States: N. p., 2016. Web. doi:10.1063/1.4961878.
Velazquez, R., Rivera, M., Feng, P., E-mail: p.feng@upr.edu, & Aldalbahi, A. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors. United States. https://doi.org/10.1063/1.4961878
Velazquez, R., Rivera, M., Feng, P., E-mail: p.feng@upr.edu, and Aldalbahi, A. 2016. "Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors". United States. https://doi.org/10.1063/1.4961878.
@article{osti_22611389,
title = {Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors},
author = {Velazquez, R. and Rivera, M. and Feng, P., E-mail: p.feng@upr.edu and Aldalbahi, A.},
abstractNote = {High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.},
doi = {10.1063/1.4961878},
url = {https://www.osti.gov/biblio/22611389}, journal = {AIP Advances},
issn = {2158-3226},
number = 8,
volume = 6,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}