Magnetoresistance measurements of superconducting molybdenum nitride thin films

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4948112· OSTI ID:22608836

Arasu, A. V. Thanikai; Amaladass, E. P. ^[1]

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1. Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam-603102 (India)

Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc{sub 2}(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

• OSTI ID: 22608836
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
CRITICAL FIELD
GLASS
MAGNETORESISTANCE
MOLYBDENUM
MOLYBDENUM NITRIDES
NANOSTRUCTURES
SPUTTERING
SUBSTRATES
SUPERCONDUCTIVITY
THIN FILMS
TRANSITION TEMPERATURE